MHEMT G-band low-noise amplifiers

Author

Karkkainen, Mikko ; Kantanen, Mikko ; Caujolle-Bert, Sylvain ; Varonen, Mikko ; Weber, R. ; Leuther, A. ; Seelmann-Eggebert, Matthias ; Narhi, T. ; Halonen, Kari A. I.

Author_Institution

Dept. of Micro- & Nanosci., Aalto Univ., Aalto, Finland

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

Keywords

high electron mobility transistors; low noise amplifiers; microprocessor chips; G-band equipment; MHEMT; frequency 170 GHz to 200 GHz; high-gain amplifier; humidity; low-noise amplifiers; metamorphic high electron mobility transistor; microchips; noise figure 4 dB to 7 dB; water vapor profiling application; HEMTs; Indium phosphide; Low-noise amplifiers; Noise figure; Scattering parameters; Low-noise amplifiers; MMIC amplifiers; Millimeter wave integrated circuits; metamorphic HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697544

Filename

6697544