DocumentCode :
664565
Title :
Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs
Author :
Jardel, O. ; Laurent, S. ; Reveyrand, Tibault ; Quere, R. ; Nakkala, P. ; Martin, Andrew ; Piotrowicz, S. ; Campovecchio, M. ; Delage, S.L.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
We propose here a non-linear GaN HEMT model for CAD including a trapping effects description consistent with both small-signal and large-signal operating modes. It takes into account the dynamics of the traps and then allows to accurately model the modulated large signal characteristics that are encountered in telecommunication and radar signals. This model is elaborated through low-frequency S-parameter measurements complementary to more classical pulsed-IV characterizations. A 8×75μm AlInN/GaN HEMT model was designed and particularly validated in large-signal pulsed RF operation. It is also shown that thermal and trapping effects have opposite effects on the output conductance, thus opening the way for separate characterizations of the two effects.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; AlInN-GaN; CAD; large signal dynamic characteristics; low frequency S parameter measurements; modulated large signal characteristics; nonlinear HEMT model; radar signals; telecommunication signals; thermal effects; trap induced dispersion; trapping effects description; Charge carrier processes; Dispersion; Gallium nitride; HEMTs; Load modeling; MODFETs; Radio frequency; CAD non-linear model; RF pulsed operation; Trappings effects; low frequency S-parameters; thermal effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697576
Filename :
6697576
Link To Document :
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