Title :
GaN MMIC Doherty power amplifier solutions for backhaul microwave links
Author :
Camarchia, Vittorio ; Colantonio, P. ; Emanuelsson, T. ; Ghione, G. ; Giannini, F. ; Giofre, R. ; Piazzon, L. ; Pirola, Marco ; Quaglia, R. ; Wegeland, T.
Author_Institution :
Politec. di Torino, Turin, Italy
Abstract :
In this paper, two 5W power amplifier solutions for microwave backhaul at 7GHz are presented. They are based on 0.25μm GaN on SiC MMIC technology, and rely on advanced Doherty schemes. The first solution maximizes the back-off efficiency at center frequency, reaching a value around 50% at 7dB OBO. The second MMIC is optimized for a wideband behavior, with efficiency exceeding 40% on a 15% relative bandwidth. Characterization results and system level behavior of the two proposed MMICs are compared and discussed.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium compounds; microwave links; microwave power amplifiers; wide band gap semiconductors; GaN; MMIC Doherty power amplifier; SiC; microwave backhaul; microwave links; power 5 W; size 0.25 mum; Bandwidth; Frequency measurement; Gain; Gallium nitride; MMICs; Power generation; Silicon carbide; Doherty; MMIC; backhaul; gallium nitride; power amplifier;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697577
