GaN MMIC Doherty power amplifier solutions for backhaul microwave links

Author

Camarchia, Vittorio ; Colantonio, P. ; Emanuelsson, T. ; Ghione, G. ; Giannini, F. ; Giofre, R. ; Piazzon, L. ; Pirola, Marco ; Quaglia, R. ; Wegeland, T.

Author_Institution

Politec. di Torino, Turin, Italy

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

In this paper, two 5W power amplifier solutions for microwave backhaul at 7GHz are presented. They are based on 0.25μm GaN on SiC MMIC technology, and rely on advanced Doherty schemes. The first solution maximizes the back-off efficiency at center frequency, reaching a value around 50% at 7dB OBO. The second MMIC is optimized for a wideband behavior, with efficiency exceeding 40% on a 15% relative bandwidth. Characterization results and system level behavior of the two proposed MMICs are compared and discussed.

Keywords

III-V semiconductors; MMIC amplifiers; gallium compounds; microwave links; microwave power amplifiers; wide band gap semiconductors; GaN; MMIC Doherty power amplifier; SiC; microwave backhaul; microwave links; power 5 W; size 0.25 mum; Bandwidth; Frequency measurement; Gain; Gallium nitride; MMICs; Power generation; Silicon carbide; Doherty; MMIC; backhaul; gallium nitride; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697577

Filename

6697577