Characterization of submillimeter-wave Schottky diodes in the 500–750 GHz band using micromachined on-wafer probes

Author

Hawasli, S.H. ; Bauwens, Matthew F. ; Lichtenberger, Arthur W. ; Barker, N.S. ; Weikle, Robert M.

Author_Institution

Charles L. Brown Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

For the first time, direct measurement and characterization of planar Schottky diodes using micromachined on-wafer probes operating from 500 to 750 GHz is described. The Schottky diodes are fabricated on a GaAs substrate and integrated into a coplanar waveguide to allow direct measurement of the device calibrated scattering parameters using CPW probes. The measurements are used to establish and verify equivalent circuit models and parasitics for submillimeter-wave diodes that, previously, were based solely on simulation or scaling of measurements done at microwave frequencies.

Keywords

III-V semiconductors; S-parameters; Schottky diodes; coplanar waveguides; equivalent circuits; gallium arsenide; micromachining; submillimetre wave diodes; GaAs; coplanar waveguide; device calibrated scattering parameters; direct measurement; equivalent circuit models; frequency 500 GHz to 750 GHz; micromachined on wafer probes; planar Schottky diodes; submillimeter wave Schottky diodes; Anodes; Coplanar waveguides; Frequency measurement; Integrated circuit modeling; Probes; Schottky diodes; Transmission line measurements; Schottky diodes; Submillimeter-wave; on-wafer measurement; scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697588

Filename

6697588