DocumentCode
664588
Title
Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
Author
Rui Hou ; Spirito, M. ; Gajadharsing, John ; de Vreede, Leo C. N.
Author_Institution
Delft Univ. of Technol., Delft, Netherlands
fYear
2013
fDate
2-7 June 2013
Firstpage
1
Lastpage
3
Abstract
In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally quantified for the first time.
Keywords
MOS integrated circuits; radiofrequency power amplifiers; LDMOS Doherty power amplifier; active device interactions; frequency 2.2 GHz; high efficiency power amplifiers; interacting power devices; nonintrusive characterization; power 400 W; Current measurement; Ports (Computers); Power amplifiers; Power generation; Probes; Semiconductor device measurement; Voltage measurement; Active load modulation; RF power amplifiers; near-field measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location
Seattle, WA
ISSN
0149-645X
Print_ISBN
978-1-4673-6177-4
Type
conf
DOI
10.1109/MWSYM.2013.6697599
Filename
6697599
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