Electrothermal modeling of microwave and RF PIN Diode switch and attenuator circuits

Author

Caverly, Robert H. ; Khan, Sharifullah

Author_Institution

Dept. of Electr. & Comput. Eng., Villanova Univ., Villanova, PA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

This paper describes a time-domain electrothermal model for the microwave and RF p-i-n diode showing its usefulness in the design of PIN diode-based RF attenuator circuits over wide ambient temperature changes. The paper provides an overview of thermal variations on RF attenuation in PIN diode circuits and verifies this phenomenon with measurements on a series-reflective attenuator. These measured results compare favorably with the electrothermal model and provide circuit designers the insight needed to simulate and design temperature compensation circuits in time-domain simulators such as SPICE.

Keywords

attenuators; microwave diodes; microwave switches; p-i-n diodes; time-domain analysis; RF PIN diode switch; RF attenuation; SPICE; ambient temperature; attenuator circuits; microwave switches; series-reflective attenuator; temperature compensation circuit design; thermal variations; time-domain electrothermal model; time-domain simulators; Integrated circuit modeling; Microwave circuits; PIN photodiodes; Radio frequency; Resistance; Temperature; Temperature measurement; SPICE; electrothermal effects; microwave circuits; microwave diodes; p-i-n diodes; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697636

Filename

6697636