DocumentCode :
664625
Title :
Electrothermal modeling of microwave and RF PIN Diode switch and attenuator circuits
Author :
Caverly, Robert H. ; Khan, Sharifullah
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., Villanova, PA, USA
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper describes a time-domain electrothermal model for the microwave and RF p-i-n diode showing its usefulness in the design of PIN diode-based RF attenuator circuits over wide ambient temperature changes. The paper provides an overview of thermal variations on RF attenuation in PIN diode circuits and verifies this phenomenon with measurements on a series-reflective attenuator. These measured results compare favorably with the electrothermal model and provide circuit designers the insight needed to simulate and design temperature compensation circuits in time-domain simulators such as SPICE.
Keywords :
attenuators; microwave diodes; microwave switches; p-i-n diodes; time-domain analysis; RF PIN diode switch; RF attenuation; SPICE; ambient temperature; attenuator circuits; microwave switches; series-reflective attenuator; temperature compensation circuit design; thermal variations; time-domain electrothermal model; time-domain simulators; Integrated circuit modeling; Microwave circuits; PIN photodiodes; Radio frequency; Resistance; Temperature; Temperature measurement; SPICE; electrothermal effects; microwave circuits; microwave diodes; p-i-n diodes; temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697636
Filename :
6697636
Link To Document :
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