Graphene technology for RF and THz applications

Author

Valdes-Garcia, A. ; Fegnian Xia ; Shu-Jen Han ; Farmer, Damon B. ; Dimitrakopoulos, Christos ; Oida, Soushi ; Hugen Yan ; Yanqing Wu ; Hedges, Crystal M. ; Jenkins, Keith A. ; Pfeiffer, David ; Grill, A. ; Avouris, Phaedon ; Haensch, Wilfried

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

This work presents recent advances in the development of graphene technology for various applications from RF to THz frequencies. First, large-scale graphene synthesis methods are reviewed. Graphene FETs suitable for RF applications are then presented along with their DC and RF characteristics. The challenges and current progress toward wafer-scale integration of graphene-based RFICs are also discussed including RFIC measurement results up to 200C. Finally, the absorption properties of graphene at THz frequencies are discussed.

Keywords

graphene; radiofrequency integrated circuits; wafer-scale integration; RF applications; RFIC measurement; THz applications; graphene FET; graphene based RFIC; graphene synthesis methods; graphene technology; wafer scale integration; Field effect transistors; Graphene; Loss measurement; Mixers; Radio frequency; Silicon carbide; Temperature measurement; Graphene; RFIC; THz; nano electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697638

Filename

6697638