• DocumentCode
    664634
  • Title

    Lifetime effects of drive voltage for a commercially-available ohmic-contact RF MEMS switch

  • Author

    Fruehling, Adam ; Wei Yang ; Peroulis, Dimitrios

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2013
  • fDate
    2-7 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work presents the first report on the influence of actuation voltage on high-voltage-switching lifetime with a population study of commercially-available ohmic contact RF MEMS switches manufactured by Omron. For switches actuated with a bias voltage of 15% less than Omron´s specified operating point a greater than 6× increase in lifetime is observed for 75% of devices. This is despite the fact that a 15% reduced voltage increases the bouncing behavior of the switch. Simulated results suggest that it is likely more important that the 15% reduced voltage decreases the impact velocity and force by 24% and 42% respectively. While the increase in switch lifetime is significant, it comes with a penalty of increased dispersion in the achieved contact resistance (1-3.1 Ω versus 1-2.5 Ω) and increased settling time (48 μs versus 13 μs).
  • Keywords
    microswitches; semiconductor device reliability; actuation voltage; bias voltage; bouncing behavior; commercially-available ohmic-contact RF MEMS switch; drive voltage; force; high-voltage-switching lifetime; impact velocity; switch lifetime effects; Contacts; Force; Microswitches; Radio frequency; Sociology; Statistics; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
  • Conference_Location
    Seattle, WA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-6177-4
  • Type

    conf

  • DOI
    10.1109/MWSYM.2013.6697645
  • Filename
    6697645