A 0.37–0.43 THz wideband quadrupler with 160 μW peak output power in 45 nm CMOS

Author

Golcuk, Faith ; Fung, Andy ; Rebeiz, Gabriel M.

Author_Institution

Univ. of California, San Diego, La Jolla, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a wideband 45 nm CMOS SOI quadrupler at 370 to > 430 GHz. The balanced multiplier results in a very low third harmonic component, and uses reflectors at the output port to reflect the fundamental and the second harmonic frequency into the quadrupler for improved efficiency. The measured output power is > 100 μW at 370-430 GHz with a peak value of 150-160 μW at 390-415 GHz and a conversion loss of 19-20 dB. To the author´s knowledge, this is the first demonstration of a wideband CMOS quadrupler at THz frequencies.

Keywords

CMOS integrated circuits; frequency multipliers; CMOS SOI quadrupler; conversion loss; frequency 0.37 THz to 0.43 THz; frequency 390 GHz to 415 GHz; harmonic frequency; power 150 muW to 160 muW; power 160 muW; reflector; size 45 nm; third harmonic component; wideband quadrupler; CMOS integrated circuits; Harmonic analysis; Loss measurement; Power generation; Power measurement; Silicon germanium; Transistors; CMOS; THz sources; frequency multiplier; mm-wave; quadrupler;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697653

Filename

6697653