W-Band, Broadband 2W GaN MMIC

Author

Schellenberg, James ; Bumjin Kim ; Phan, The-Long

Author_Institution

QuinStar Technol., Torrance, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

This paper reports the first high-power GaN MMIC covering 70 percent of W-band (75-110 GHz). Using an on-chip traveling-wave power combiner circuit, it achieves power levels of greater than 1 W CW over the 80 to 100 GHz band and a peak power of 2 W CW at 84 GHz. Operating in a pulsed mode (10% duty), this MMIC produces a peak power of 3.2 W at 86 GHz. This work represents the first application of an on-chip combining network to simultaneously achieve high power levels and wide bandwidths at W-band frequencies.

Keywords

III-V semiconductors; MMIC; gallium compounds; power combiners; wide band gap semiconductors; GaN; W-Band MMIC; broadband 2W GaN MMIC; frequency 75 GHz to 100 GHz; frequency 80 GHz to 100 GHz; frequency 84 GHz; frequency 86 GHz; high-power GaN MMIC; on-chip combining network; on-chip traveling-wave power combiner circuit; power 2 W; power 3.2 W; Bandwidth; Gain; Gallium nitride; MMICs; Microwave amplifiers; Power amplifiers; Power generation; GaN; W-band; monolithic microwave integrated circuits (MMIC); solid-state power amplifier (SSPA);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697656

Filename

6697656