DocumentCode :
664688
Title :
A wideband 0.7–2.2 GHz tunable power amplifier with over 64% efficiency based on high-Q second harmonic loading
Author :
Yu-Chen Wu ; Chen, K. ; Naglich, Eric J. ; Peroulis, Dimitrios
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
A non-resistive high-Q bandwidth-extension technique for wideband high-efficiency power amplifiers is proposed in this paper. Specifically, the problem of proper termination of the second harmonic in power amplifiers with over 2:1 bandwidth is addressed. A tunable narrowband high-Q band-stop filter is included at the output of the power amplifier to properly terminate the transistor at its lower-band frequencies whose second harmonics fall within the bandwidth of the amplifier. The presented design is experimentally validated by manufacturing and measuring a 0.7-2.2 GHz GaN wideband high-efficiency power amplifier terminated by a high-Q (measured Q of 900) narrow-band (10 dB bandwidth of 2 MHz) band-stop filter tunable from 1.4-2.2 GHz. An over 3:1 bandwidth is achieved with measured output power of 40 dBm, average gain of 10 dB, and efficiency of > 64%. The proposed termination results in an average improvement of over 10% throughout the entire bandwidth.
Keywords :
III-V semiconductors; band-stop filters; circuit tuning; gallium compounds; microwave amplifiers; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; frequency 0.7 GHz to 2.2 GHz; high-Q second harmonic loading; lower-band frequencies; nonresistive high-Q bandwidth-extension technique; tunable narrowband high-Q band-stop filter; wideband high-efficiency power amplifiers; wideband tunable power amplifier; Harmonic analysis; Impedance matching; Power harmonic filters; Power measurement; Wideband; Power amplifiers; band-stop filter; evanescent-mode cavity; gallium nitride; high efficiency; wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697699
Filename :
6697699
Link To Document :
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