• DocumentCode
    664716
  • Title

    Design of a concurrent quad-band GaN-HEMT Doherty power amplifier for wireless applications

  • Author

    Xuan Anh Nghiem ; Negra, Renato

  • Author_Institution
    UMIC Res. Centre, RWTH Aachen Univ., Aachen, Germany
  • fYear
    2013
  • fDate
    2-7 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents the design and measurement results of a quad-band Doherty power amplifier (DPA) for concurrent operation in the 900 MHz, 1.5 GHz, 2.1 GHz and 2.6 GHz frequency bands. In principle, a quad-band DPA requires that all passive structures involving the DPA, but especially the impedance inverter network (IIN), be either broad-or multiband to cover the desired number of frequency bands. In this work, a newly developed multiband IIN is introduced, enabling the realisation of multiband symmetric and asymmetric DPAs. The design concept can theoretically be applied for a large number of frequency bands. The approach has been validated in hybrid technology using a 10 W and 25 W GaN-HEMT as carrier and peaking devices, respectively. The measured results show peak drain efficiencies of 58.12 %, 60.52 %, 52.74 %, and 43.3 %, associated with output powers of greater than 41.75 dBm in all four bands. The corresponding drain efficiencies at 6 dB output power back-off are measured to be 48 %, 56 %, 47 % and 31.8 % for the first, second, third, and fourth band, respectively. To the best of our knowledge, this is the first time a quad-band concurrent DPA has been successfully designed and implemented.
  • Keywords
    UHF power amplifiers; high electron mobility transistors; invertors; power amplifiers; concurrent quad-band GaN-HEMT; frequency 1.5 GHz; frequency 2.1 GHz; frequency 2.6 GHz; frequency 900 MHz; hybrid technology; impedance inverter network; passive structures; quad-band Doherty power amplifier; quad-band concurrent DPA; wireless applications; Dual band; Frequency measurement; Impedance; Load modeling; Power generation; Power measurement; Wireless communication; Concurrent; Doherty; HEMTs; gallium nitride; multiband; power amplifiers; quad-band;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
  • Conference_Location
    Seattle, WA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-6177-4
  • Type

    conf

  • DOI
    10.1109/MWSYM.2013.6697727
  • Filename
    6697727