Title :
Minimizing attenuation of coplanar waveguide on lossy silicon substrates up to 300 GHz
Author :
Islam, Rashed ; Henderson, Rashaunda M.
Author_Institution :
Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
The attenuation constant of coplanar waveguide (CPW), conductor backed CPW (CBCPW) and grounded CPW (GCPW) interconnects is compared up to 300 GHz. Spin-on benzocyclobutene (BCB) dielectric is deposited on low resistivity (10 Ω-cm) silicon (Si) substrates to characterize the loss of interconnects at millimeter-wave (mm-wave) frequencies. CPW fabricated on 58 μm of BCB has similar performance as CBCPW and GCPW fabricated on 8.5 μm and 7.6 μm of BCB, respectively. CPW with thick dielectric layers present attenuation of 1.89 dB/mm at 300 GHz, whereas CBCPW and GCPW have an attenuation of 1.87 dB/mm and 1.96 dB/mm, respectively, at the same frequency.
Keywords :
coplanar waveguides; elemental semiconductors; silicon; BCB dielectric; CBCPW interconnect; GCPW interconnect; Si; attenuation constant; attenuation minimization; conductor-backed CPW interconnect; coplanar waveguide; frequency 300 GHz; grounded CPW interconnect; interconnect loss; lossy silicon substrates; low-resistivity silicon substrate; millimeter-wave frequency; mm-wave frequency; size 58 mum; size 7.6 mum; size 8.5 mum; spin-on benzocyclobutene dielectric; Attenuation; CMOS integrated circuits; Coplanar waveguides; Dielectrics; Integrated circuit interconnections; Silicon; Substrates; Attenuation constant; BCB; CBCPW; CPW; GCPW; mm-wave;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697736
