Millimeter-wave multi-chip module for GaN MMIC transceivers fabricated using multilayer ceramics technology

Author

Masuda, Shin ; Yamada, Makoto ; Kamada, Yoichi ; Ozaki, S. ; Makiyama, Kozo ; Okamoto, N. ; Imanishi, Kenji ; Kikkawa, Takamaro ; Shigematsu, Hisao

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

This paper presents a multi-chip module (MCM) suitable for GaN monolithic microwave integrated circuit transceivers. The MCM has an embedded heat sink and novel radio frequency interface structure fabricated using multilayer ceramics technology. The novel interface widens the bandwidth and improves insertion loss operating up to millimeter-wave frequencies. A fabricated transceiver MCM occupying only 12 × 36 mm² is also demonstrated with a GaN power amplifier.

Keywords

III-V semiconductors; MMIC; ceramic packaging; gallium compounds; heat sinks; millimetre wave power amplifiers; multichip modules; radio transceivers; GaN; GaN MMIC transceivers; GaN monolithic microwave integrated circuit transceivers; GaN power amplifier; MCM; embedded heat sink; millimeter-wave frequencies; multichip module; multilayer ceramics technology; novel radio frequency interface structure; Ceramics; Frequency measurement; Gallium nitride; Heat sinks; MMICs; Millimeter wave technology; Radio frequency; GaN; MCM; MMIC; millimeter-wave; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697771

Filename

6697771