Title :
Class F rectifier RF-DC conversion efficiency analysis
Author :
Jiapin Guo ; Xinen Zhu
Author_Institution :
Univ. of Michigan-Shanghai Jiao Tong Univ. Joint Inst., Shanghai, China
Abstract :
In this paper, an analytical model for the Class F rectifier RF-DC conversion efficiency is presented. This model is based on the Class F voltage and current waveforms in the time domain, and analyzes three kinds of power losses due to the diode series resistor, junction capacitor and built-in potential. Closed-form equations are derived to calculate the Class F rectifier efficiency at various input power levels. This model can well predict the efficiency improvement due to the Class F harmonic termination. A 900 MHz Class F rectifier is designed with the highest measured efficiency of 80.4%, and the measurement results agree well with the proposed model calculation.
Keywords :
Schottky diodes; UHF circuits; harmonics suppression; rectifying circuits; solid-state rectifiers; time-domain analysis; Class F harmonic termination; Class F rectifier RF-DC conversion efficiency analysis; Class F rectifier efficiency; Class F voltage-current waveforms; Schottky diode; analytical model; built-in potential; closed-form equations; diode series resistor; efficiency 80.4 percent; frequency 900 MHz; junction capacitor; power losses; time domain; Harmonic analysis; IP networks; Junctions; Microwave circuits; Schottky diodes; Rectifiers; Schottky diodes; energy efficiency; harmonic analysis;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697776
