DocumentCode
664790
Title
Two-dimensional materials for ubiquitous electronics
Author
Han Wang ; Lili Yu ; Xu Zhang ; Mailly, Benjamin ; Mackin, Charles ; Jing Kong ; Palacios, T.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2013
fDate
2-7 June 2013
Firstpage
1
Lastpage
3
Abstract
The last few years have witnessed a tremendous research effort on two-dimensional materials for electronic applications. Graphene was the first one of these materials, quickly followed by boron nitride, di-chalcogenites and other compounds. Some of these materials are semimetals, others are semiconductors, and a few others excellent dielectrics and insulators. They represent a new toolbox of electronic materials with very unique properties. Thanks to the development of chemical vapor deposition techniques, they can be grown in very large areas, potentially in a roll-to-roll basis. In addition, their extreme thinness makes them highly transparent and extremely flexible. In summary, they constitute the basic building blocks of a new generation of electronics that could be integrated everywhere, a new ubiquitous electronics. This talk will discuss some of the recent results that our group has achieved on MoS2 electronics, including the development of the first RF transistors, integrated circuits and memory devices.
Keywords
chemical vapour deposition; dielectric materials; insulators; semiconductor materials; MoS2 electronics; RF transistors; chemical vapor deposition techniques; dielectrics; electronic applications; electronic materials; insulators; integrated circuits; memory devices; roll-to-roll basis; semiconductors; semimetals; two-dimensional materials; ubiquitous electronics; Differential amplifiers; Electrical engineering; Fabrication; Field effect transistors; Inverters; Logic gates; Materials; di-chalcogenides; flexible electronics; graphene; molybdenum disulfide; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location
Seattle, WA
ISSN
0149-645X
Print_ISBN
978-1-4673-6177-4
Type
conf
DOI
10.1109/MWSYM.2013.6697802
Filename
6697802
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