Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

Author

Arshad, T.S.M. ; Othman, M.A. ; Yasin, N.Y.M. ; Taib, S.N. ; Ismail, M.M. ; Napiah, Z.A.F.M. ; Sulaiman, H.A. ; Hussain, Mutia Nurulhusna ; Said, M.A.M. ; Misran, M.H. ; Ramlee, R.A.

Author_Institution

Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia

fYear

2013

fDate

7-8 Nov. 2013

Firstpage

70

Lastpage

75

Abstract

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

Keywords

attenuators; elemental semiconductors; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; silicon; IV characteristics analysis; InGaAs; PIN photodiode; RF switches; Si; attenuators; intrinsic region; negative region; photodetectors; positive region; radiofrequency switches; Doping; Indium gallium arsenide; Noise; PIN photodiodes; Silicon; IV Characteristics; Indium gallium Arsenide (InGaAs); PIN Photodiode; Silicon (Si);

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2013 3rd International Conference on

Conference_Location

Bandung

Print_ISBN

978-1-4799-1649-8

Type

conf

DOI

10.1109/ICICI-BME.2013.6698467

Filename

6698467