Modeling of tunneling currents on Al/SiO2/p-Si MOS capacitors with nanometer-thick oxides

In this paper, the tunneling current calculations of isotropic and anisotropic-isotropic electron effective mass on Al/SiO₂/p-Si MOS involving coupling effect are presented. The results indicated that the impact of tunneling calculation involving coupling effect is that electron velocity acts as parameter of calculation, especially in inversion condition. In this condition, the difference between anisotropic-isotropic and isotropic calculation results tends to be greater when the electron velocity increases. The result of anisotropic-isotropic model is closer to the theory than that of isotropic result. In addition, the coupling effect makes the values of tunneling current more sensitive to the electron effective mass.