RF characterization and modeling of through-silicon vias

This paper investigates the RF properties of 5 μm diameter/50 μm depth through-silicon vias (TSVs) built in CMOS 65nm technology. An equivalent lump model of the TSVs was developed based on 3D full-wave electromagnetic simulations and was validated by RF measurements. Based on the validated TSV model, the crosstalk among the TSVs was addressed as a function of distance and frequency. An equivalent lump model of the TSV-to-TSV crosstalk was also developed. Good agreement was obtained between simulations and measurements. Additionally, the noise peak vs. TSV-to-TSV distance and the crosstalk noise as a function of rise time was also investigated. It was found that the crosstalk noise decreased and the noise width increased with increasing signal rise time. A short signal rise time should thus be applied only if high speed is really required.