DocumentCode
66576
Title
A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Microelectromechanical Switches
Author
Barbato, Marco ; Meneghesso, Gaudenzio
Author_Institution
Dept. of Inf. Eng., Univ. of Padua, Padua, Italy
Volume
36
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
177
Lastpage
179
Abstract
Radio frequency (RF) microelectromechanical system (MEMS) switches subject to long term actuation suffer from narrowing of the actuation and release voltages. This can lead to the failure of the device when the device remains actuated without external biasing due to stiction effects. The stiction phenomenon is one of the most challenging problems in RF MEMS switches, especially in applications where these devices have to remain actuated for an extended period of time (months or even years). In this letter, we show a novel recovery technique to alleviate the stiction phenomenon significantly increasing the device lifetime. In particular, we show how the flowing of a small current through the suspended membrane can be used to fully restore the device properties to its fresh conditions in just a few seconds.
Keywords
failure analysis; microswitches; reliability; RF MEMS switches; actuation voltages; device lifetime; long term actuation; radio frequency microelectromechanical switches; recovery technique; release voltages; stiction phenomenon; suspended membrane; Charge carrier processes; Degradation; Micromechanical devices; Microswitches; Radio frequency; Stress; RF MEMS; failure mechanism; long term stresses; reliability; stiction; stiction,;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2376594
Filename
6971187
Link To Document