DocumentCode :
665831
Title :
Dynamic thermal modelling and analysis of press-pack IGBTs both at component-level and chip-level
Author :
Busca, Cristian ; Teodorescu, Remus ; Blaabjerg, Frede ; Helle, Lars ; Abeyasekera, Tusitha
Author_Institution :
Dept. of energy Technol., Aalborg Univ., Aalborg, Denmark
fYear :
2013
fDate :
10-13 Nov. 2013
Firstpage :
677
Lastpage :
682
Abstract :
Thermal models are needed when designing power converters for Wind Turbines (WTs) in order to carry out thermal and reliability assessment of certain designs. Usually the thermal models of Insulated Gate Bipolar Transistors (IGBTs) are given in the datasheet in various forms at component-level, not taking into account the thermal distribution among the chips. This is especially relevant in the case of Press-Pack (PP) IGBTs because any non-uniformity of the clamping pressure can affect the chip-level thermal impedances. This happens because the contact thermal resistances in the thermal impedance chains are clamping pressure dependent. In this paper both component-level and chip-level dynamic thermal models for the PP IGBT under investigation are developed. Both models are developed using geometric parameters and material properties of the device. Using the thermal models, the thermal impedance curves under various mechanical clamping conditions are derived. Moreover, the deformation of the internal components of the PP IGBT under operating-like conditions is investigated with the help of the thermal models and the coefficient of thermal expansion (CTE) information.
Keywords :
insulated gate bipolar transistors; integrated circuit packaging; power semiconductor devices; semiconductor device packaging; thermal analysis; thermal expansion; thermal management (packaging); chip level thermal impedance; clamping pressure; coefficient of thermal expansion; component level thermal model; dynamic thermal modelling; insulated gate bipolar transistor; mechanical clamping; power converter; press pack IGBT; reliability assessment; thermal assessment; Clamps; Impedance; Insulated gate bipolar transistors; Silicon; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location :
Vienna
ISSN :
1553-572X
Type :
conf
DOI :
10.1109/IECON.2013.6699216
Filename :
6699216
Link To Document :
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