Electro-thermal modeling of SiC power devices for circuit simulation

The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both static and dynamic models are formulated by curve fitting. Some simplifications are introduced during modeling to improve convergence and simulation speed. An all-SiC boost converter is also analyzed by simulation to evaluate the models.