DocumentCode
665942
Title
Thermal considerations about modern energy saving power-MOSFET: Is the reduced thickness of the silicon a drawback for short high power load conditions?
Author
Walter, R.
Author_Institution
Applic. Eng. Low Voltage Drives, Villach, Austria
fYear
2013
fDate
10-13 Nov. 2013
Firstpage
1359
Lastpage
1361
Abstract
The trend of the last years to reduce the thickness of modern Power Silicon Chips was suspected to reduce the thermal performance of the MOSFET. This article shows from thermal point of view what happens in a typical packaged Power Switch during a high load condition. These load conditions (typically around one second with currents several times higher than at nominal conditions) are typical for power tools but occur also in a lot of other applications. Calculations and considerations are compared to Simulations done with the Finite Element Methode.
Keywords
finite element analysis; power MOSFET; simulation; switches; energy saving power-MOSFET; finite element method; power load conditions; power silicon chips; power switch; simulations; thermal considerations; thermal performance; Aluminum; Copper; Heating; MOSFET; Silicon; Thermal conductivity; Low voltage MOSFET; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location
Vienna
ISSN
1553-572X
Type
conf
DOI
10.1109/IECON.2013.6699330
Filename
6699330
Link To Document