• DocumentCode
    665942
  • Title

    Thermal considerations about modern energy saving power-MOSFET: Is the reduced thickness of the silicon a drawback for short high power load conditions?

  • Author

    Walter, R.

  • Author_Institution
    Applic. Eng. Low Voltage Drives, Villach, Austria
  • fYear
    2013
  • fDate
    10-13 Nov. 2013
  • Firstpage
    1359
  • Lastpage
    1361
  • Abstract
    The trend of the last years to reduce the thickness of modern Power Silicon Chips was suspected to reduce the thermal performance of the MOSFET. This article shows from thermal point of view what happens in a typical packaged Power Switch during a high load condition. These load conditions (typically around one second with currents several times higher than at nominal conditions) are typical for power tools but occur also in a lot of other applications. Calculations and considerations are compared to Simulations done with the Finite Element Methode.
  • Keywords
    finite element analysis; power MOSFET; simulation; switches; energy saving power-MOSFET; finite element method; power load conditions; power silicon chips; power switch; simulations; thermal considerations; thermal performance; Aluminum; Copper; Heating; MOSFET; Silicon; Thermal conductivity; Low voltage MOSFET; Thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
  • Conference_Location
    Vienna
  • ISSN
    1553-572X
  • Type

    conf

  • DOI
    10.1109/IECON.2013.6699330
  • Filename
    6699330