DocumentCode :
665942
Title :
Thermal considerations about modern energy saving power-MOSFET: Is the reduced thickness of the silicon a drawback for short high power load conditions?
Author :
Walter, R.
Author_Institution :
Applic. Eng. Low Voltage Drives, Villach, Austria
fYear :
2013
fDate :
10-13 Nov. 2013
Firstpage :
1359
Lastpage :
1361
Abstract :
The trend of the last years to reduce the thickness of modern Power Silicon Chips was suspected to reduce the thermal performance of the MOSFET. This article shows from thermal point of view what happens in a typical packaged Power Switch during a high load condition. These load conditions (typically around one second with currents several times higher than at nominal conditions) are typical for power tools but occur also in a lot of other applications. Calculations and considerations are compared to Simulations done with the Finite Element Methode.
Keywords :
finite element analysis; power MOSFET; simulation; switches; energy saving power-MOSFET; finite element method; power load conditions; power silicon chips; power switch; simulations; thermal considerations; thermal performance; Aluminum; Copper; Heating; MOSFET; Silicon; Thermal conductivity; Low voltage MOSFET; Thermal management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location :
Vienna
ISSN :
1553-572X
Type :
conf
DOI :
10.1109/IECON.2013.6699330
Filename :
6699330
Link To Document :
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