Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate

Author

Jae Woo Lee ; Simoen, Eddy ; Veloso, A. ; Moon Ju Cho ; Arimura, H. ; Boccardi, Guillaume ; Ragnarsson, Lars-Ake ; Chiarella, T. ; Horiguchi, Naoto ; Thean, A. ; Groeseneken, Guido

Author_Institution

Interuniv. Microelectron. Centre, Leuven, Belgium

Volume

60

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

2960

Lastpage

2962

Abstract

Post-treatment of replacement metal gate is investigated for the device performance improvement of high- k last p-type bulk FinFET using post-deposition annealing (PDA) and SF₆ plasma treatment. Compared with untreated HfO₂ reference, post-high- k deposition PDA and SF₆ plasma-treated devices show improved driving current and hole mobility. With the carrier number fluctuations with correlated mobility fluctuation model, ~3 times lower input gate referred noise is observed in PDA and SF₆ plasma-treated devices compared with untreated FinFETs. Post-treatments suppress the trap density of high- k last FinFET. PDA reduces oxide bulk trap whereas SF₆ plasma affects both interface and oxide bulk trap.

Keywords

MOSFET; electron traps; hole mobility; plasma materials processing; semiconductor device noise; semiconductor device reliability; carrier number fluctuations; correlated mobility fluctuation model; current mobility; device performance improvement; high- k last p-type bulk FinFET; hole mobility; input gate referred noise; interface bulk trap; low frequency noise analysis; oxide bulk trap; plasma treatment; post-deposition annealing; post-high- k deposition PDA; replacement metal gate post-treatment; trap density; FinFETs; High K dielectric materials; Logic gates; Low-frequency noise; Plasmas; Sulfur hexafluoride; Charge trapping; FinFET; high-${k}$ last; low frequency noise; replacement metal gate (RMG);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2274152

Filename

6573342