An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

Author

Wanling Deng ; Junkai Huang ; Xiaoyu Ma ; Liou, Juin J.

Author_Institution

Dept. of Electron. Eng., Jinan Univ., Guangzhou, China

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

108

Lastpage

110

Abstract

In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.

Keywords

Fermi level; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; numerical analysis; semiconductor device models; surface potential; wide band gap semiconductors; AlGaN-GaN; Fermi level; HEMT; circuit simulation application; compact current model; current-voltage characteristics; explicit surface potential calculation; high-electron mobility transistor; numerical analysis; self-heating effect; temperature-dependent free-carrier mobility; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; MODFETs; Mathematical model; Numerical models; AlGaN/GaN high-electron mobility transistor (HEMT); compact model; drain current; self-heating effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2388706

Filename

7004033