Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules

Author

Piasecki, Szymon ; Cantarellas, Antoni M. ; Rabkowski, Jacek ; Rodriguez, Paul

Author_Institution

Inst. of Control & Ind. Electron., Warsaw Univ. of Technol., Warsaw, Poland

fYear

2013

fDate

10-13 Nov. 2013

Firstpage

5957

Lastpage

5962

Abstract

This paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based on selection of the most convenient configuration, in terms of switching frequency and design of the line filter, in order to minimize the overall losses in the system. In this work two types of semiconductor devices are considered: silicon IGBT and silicon carbide MOSFET for the design of a 100 kVA system, and they performance is compared. The AC-DC converter parameters, the design methodology and preliminary simulation results for representatives of Si IGBT and SiC MOSFET modules are presented.

Keywords

AC-DC power convertors; distributed power generation; insulated gate bipolar transistors; integrated circuit design; power MOSFET; power bipolar transistors; AC-DC power converter design; LCL + tuned trap line filter; apparent power 100 kVA; distributed generation systems; overall loss minimization; power generation applications; semiconductor devices; silicon IGBT modules; silicon carbide MOSFET modules; Harmonic analysis; Insulated gate bipolar transistors; MOSFET; Power harmonic filters; Silicon; Silicon carbide; Switching frequency; AC-DC Power Converter; Direct Power Control - Space Vector Modulated; Distributed Generation; IGBT Losses Analysis; LCL + Tunned Trap Line Filter; Line Filter Design; MOSFET Losses Analysis; Silicon Carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE

Conference_Location

Vienna

ISSN

1553-572X

Type

conf

DOI

10.1109/IECON.2013.6700112

Filename

6700112