Title :
Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applications
Author :
Blinov, Andrei ; Chub, Andrii ; Vinnikov, Dmitri ; Rang, Toomas
Author_Institution :
Dept. of Electr. Eng., Tallinn Univ. of Technol., Tallinn, Estonia
Abstract :
This paper presents an evaluative comparison of Si- and SiC-based MOSFETs, operating in a qZS-derived step-up DC/DC converter. Special attention is paid to switching behaviour and power dissipation. A range of experiments was performed to determine an optimal di/dt value during transients to minimise overvoltages and dynamic losses. Additionally, some particular properties such as gate driver requirements, housing types and price are discussed.
Keywords :
DC-DC power convertors; MOSFET; silicon compounds; SiC; SiC MOSFET; high-gain DC/DC converter; power dissipation; qZS-derived step-up DC/DC converter; renewable energy application; switching behaviour; Logic gates; MOSFET; Schottky diodes; Silicon; Silicon carbide; Switches; Transient analysis; efficiency; hard-switched converter; silicon carbide;
Conference_Titel :
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location :
Vienna
DOI :
10.1109/IECON.2013.6700115
