Title :
Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance
Author :
Anders, Mark A. ; Lenahan, Patrick M. ; Cochrane, Corey J. ; Lelis, Aivars J.
Author_Institution :
Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA
Abstract :
In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.
Keywords :
MOSFET; interface states; interface structure; paramagnetic resonance; silicon compounds; wide band gap semiconductors; 4H-SiC-SiO2 interface structure; 4H-silicon carbide MOSFETs; EDMR measurements; SiC-SiO2; electrically detected magnetic resonance; electron paramagnetic resonance; electronic properties; frequency 16 GHz to 350 MHz; multiple interface-near interface defects; performance limiting imperfections; Annealing; Frequency measurement; MOSFET; Magnetic resonance; Silicon; Silicon carbide; 4H-silicon carbide (4H-SiC) MOSFET; defects; interface; magnetic resonance; magnetic resonance.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2364722
