DocumentCode
667658
Title
Feasibility of a cryogenic SiGe amplifier at 4 k
Author
Aberg, Markku ; Saijets, Jan
Author_Institution
Sensing & Wireless Devices, VTT, Espoo, Finland
fYear
2013
fDate
11-12 Nov. 2013
Firstpage
1
Lastpage
4
Abstract
The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.
Keywords
Ge-Si alloys; amplifiers; cryogenic electronics; semiconductor materials; bandwidth 1 GHz; cascade amplifier topology; cryogenic silicon germanium amplifier; cryogenic temperatures; effective temperature; gain 30 dB; integrated silicon germanium amplifier; noise figure; power consumption; temperature 4 K; Cryogenics; Heterojunction bipolar transistors; Integrated circuit modeling; Noise; Noise figure; Temperature; SiGe; amplifier; cryogenic; integrated circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
NORCHIP, 2013
Conference_Location
Vilnius
Type
conf
DOI
10.1109/NORCHIP.2013.6702011
Filename
6702011
Link To Document