DocumentCode
66783
Title
Power Electronic Devices in the Future
Author
Hudgins, Jerry L.
Author_Institution
Electr. Eng. Dept., Univ. of Nebraska, Lincoln, NE, USA
Volume
1
Issue
1
fYear
2013
fDate
Mar-13
Firstpage
11
Lastpage
17
Abstract
This paper discusses extrapolations of current silicon power device technology into the future, followed by discussions of wide band gap (WBG) power devices with a focus on silicon carbide and gallium nitride. Other WBG materials are included from carbon, such as diamond and nanotubes, to various nitrides. Far future material development, that may impact power electronic devices decades out, is also discussed.
Keywords
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; WBG materials; carbon nanotubes; diamond; extrapolations; power electronic devices; silicon power device technology; wideband gap power devices; Carbon nanotubes; Diamonds; Gallium nitride; Power semiconductor devices; Silicon carbide; Wide band gap semiconductors; Carbon nanotubes; diamond; gallium nitride (GaN); power semiconductor devices; silicon carbide (SiC); wide band gap semiconductors;
fLanguage
English
Journal_Title
Emerging and Selected Topics in Power Electronics, IEEE Journal of
Publisher
ieee
ISSN
2168-6777
Type
jour
DOI
10.1109/JESTPE.2013.2260594
Filename
6517263
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