Stress-enhanced chemical vapor deposited graphene NEMS RF resonators

Author

Lekas, Michael ; Sunwoo Lee ; Changyao Chen ; Cha, Woo-Jun ; Ayyagari, Karthik ; Hone, James ; Shepard, Kenneth

Author_Institution

Dept. of Electr. Eng., Columbia Univ. in the city of New York, New York, NY, USA

fYear

2013

fDate

21-25 July 2013

Firstpage

543

Lastpage

546

Abstract

In this work we present room-temperature measurements of graphene nanoelectromechanical resonators (GN-ERs) demonstrating quality factors (Qs) greater than 200 at resonance. A nominal resonant frequency (f_o) of 200 MHz is attained by applying strain to the suspended graphene using an SU-8 polymer clamp. Additionally, the device f_o can be tuned by more than 5% by application of a DC gate bias on the order of 5V. Chemical vapor deposited (CVD) graphene is used to demonstrate the scalability of the process.

Keywords

Q-factor; UHF resonators; chemical vapour deposition; circuit tuning; graphene; nanoelectromechanical devices; C; DC gate bias application; SU-8 polymer clamp; graphene NEMS RF resonators; nanoelectromechanical resonators; nominal resonant frequency; quality factors; stress-enhanced chemical vapor deposition; temperature 293 K to 298 K; Clamps; Graphene; Logic gates; Pollution measurement; Radio frequency; Semiconductor device measurement; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint

Conference_Location

Prague

Type

conf

DOI

10.1109/EFTF-IFC.2013.6702216

Filename

6702216