Title :
Packageless temperature sensor based on AlN/IDT/ZnO/Silicon layered structure
Author :
Legrani, O. ; Elmazria, O. ; Elhosni, M. ; Bartasyte, A. ; Pigeat, P. ; Zghoon, S.
Author_Institution :
Inst. Jean Lamour, Univ. of Lorraine, Vandoeuvre-les-Nancy, France
Abstract :
The possibility to generate simultaneously Surface Acoustic Wave (SAW) and Waveguiding layer acoustic wave (WLAW) in layered structures AlN/ZnO/Silicon was investigated. A delay line operating at 525 MHz was tested versus temperature in air and in contact with liquid. Experimental characterizations were also supported by modeling using the commercial software (COMSOL Multiphysics). The full delay line was simulated and liquid modeled by an additional layer on the top of AlN film.
Keywords :
II-VI semiconductors; III-V semiconductors; UHF detectors; acoustic transducers; aluminium compounds; elemental semiconductors; silicon; surface acoustic wave delay lines; surface acoustic wave sensors; temperature sensors; thin film sensors; wide band gap semiconductors; zinc compounds; AlN-ZnO-Si; COMSOL Multiphysics commercial software; SAW; WLAW; delay line operation; frequency 525 MHz; layered structure; packageless temperature sensor; surface acoustic wave; thin film sensor; waveguiding layer acoustic wave; Films; III-V semiconductor materials; Silicon; Surface acoustic waves; Temperature sensors; Zinc oxide; AlN; ZnO; packageless; silicon; temperature sensor;
Conference_Titel :
European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint
Conference_Location :
Prague
DOI :
10.1109/EFTF-IFC.2013.6702265
