Packageless temperature sensor based on AlN/IDT/ZnO/Silicon layered structure

Author

Legrani, O. ; Elmazria, O. ; Elhosni, M. ; Bartasyte, A. ; Pigeat, P. ; Zghoon, S.

Author_Institution

Inst. Jean Lamour, Univ. of Lorraine, Vandoeuvre-les-Nancy, France

fYear

2013

fDate

21-25 July 2013

Firstpage

259

Lastpage

261

Abstract

The possibility to generate simultaneously Surface Acoustic Wave (SAW) and Waveguiding layer acoustic wave (WLAW) in layered structures AlN/ZnO/Silicon was investigated. A delay line operating at 525 MHz was tested versus temperature in air and in contact with liquid. Experimental characterizations were also supported by modeling using the commercial software (COMSOL Multiphysics). The full delay line was simulated and liquid modeled by an additional layer on the top of AlN film.

Keywords

II-VI semiconductors; III-V semiconductors; UHF detectors; acoustic transducers; aluminium compounds; elemental semiconductors; silicon; surface acoustic wave delay lines; surface acoustic wave sensors; temperature sensors; thin film sensors; wide band gap semiconductors; zinc compounds; AlN-ZnO-Si; COMSOL Multiphysics commercial software; SAW; WLAW; delay line operation; frequency 525 MHz; layered structure; packageless temperature sensor; surface acoustic wave; thin film sensor; waveguiding layer acoustic wave; Films; III-V semiconductor materials; Silicon; Surface acoustic waves; Temperature sensors; Zinc oxide; AlN; ZnO; packageless; silicon; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint

Conference_Location

Prague

Type

conf

DOI

10.1109/EFTF-IFC.2013.6702265

Filename

6702265