DocumentCode :
667923
Title :
High overtone bulk acoustic resonators for high temperature sensing applications
Author :
Courjon, Emilie ; Francois, B. ; Martin, G. ; Daniau, W. ; Baron, T. ; Loschonsky, M. ; Friedt, J.-M. ; Belgacem, Brahim ; Reindl, Leonhard ; Ballandras, S.
Author_Institution :
FEMTO-ST Inst., UTBM, Besancon, France
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
992
Lastpage :
995
Abstract :
High overtone Bulk Acoustic Resonators have been developed for radio-frequency application such as oscillator stabilization, but also as an alternative to surface acoustic wave resonator for sensor development. In the present work, the possibility to operate such devices at temperature up to 800°C is investigated experimentally. Devices built using Aluminum Nitride deposited on Silicon with Platinum electrodes have been manufactured and resonance frequencies near the 434-MHz centered ISM band have been characterized from room conditions to 800°C. Although the exposition to such a temperature yields changes in the device response, it turns out that the operation is partly reversible and that these HBARs could operate without major defects for several tens of hours at such regimes. The development of wireless temperature sensors on this base then reveals accessible.
Keywords :
III-V semiconductors; aluminium compounds; bulk acoustic wave devices; platinum; silicon; surface acoustic wave resonators; temperature sensors; wide band gap semiconductors; wireless sensor networks; AlN-Si-Pt; HBAR; ISM band; frequency 434 MHz; overtone bulk acoustic resonator; radiofrequency application; surface acoustic wave resonator; temperature 800 degC; wireless temperature sensors; Electrodes; Frequency measurement; III-V semiconductor materials; Resonant frequency; Temperature; Temperature measurement; Temperature sensors; AlN; BAW; High overtone Bulk Acoustic Resonator — HBAR; High temperature; Sapphire; Sensor; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint
Conference_Location :
Prague
Type :
conf
DOI :
10.1109/EFTF-IFC.2013.6702287
Filename :
6702287
Link To Document :
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