• DocumentCode
    668012
  • Title

    Pulsed laser annealing: A scalable and practical technology for monolithic 3D IC

  • Author

    Rajendran, Bipin ; Henning, A.K. ; Cronquist, B. ; Or-Bach, Zvi

  • Author_Institution
    Dept. of Electr. Eng., IIT Bombay, Mumbai, India
  • fYear
    2013
  • fDate
    2-4 Oct. 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Classical dimensional scaling faces challenges from growing on-chip interconnect time delays, and escalating lithography costs and layout limitations. In this paper, we present practical integration schemes for developing cost-efficient 3D ICs in a monolithic fashion, which employ fully depleted transistor channels and laser annealing to achieve sharper junction definition.
  • Keywords
    laser beam annealing; three-dimensional integrated circuits; classical dimensional scaling; fully depleted transistor channels; layout limitations; lithography costs; monolithic 3D IC; on-chip interconnect; pulsed laser annealing; time delays; Annealing; Integrated circuit modeling; Logic gates; Silicon; Three-dimensional displays; Transistors; 3D integration; SOI; laser annealing; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2013 IEEE International
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • DOI
    10.1109/3DIC.2013.6702386
  • Filename
    6702386