Title :
Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors
Author :
Meyer, D.J. ; Feygelson, Tatyana I. ; Anderson, Travis J. ; Roussos, Jason A. ; Tadjer, Marko J. ; Downey, Brian P. ; Katzer, D. Scott ; Pate, Bradford B. ; Ancona, Mario G. ; Koehler, Andrew D. ; Hobart, Karl D. ; Eddy, Charles R.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to outperform reference devices in transconductance, large-signal gain, output power density, and power-added efficiency at 4 GHz. The measured improvements were suspected to be related to reduced dispersion and lower source access resistance afforded by the NCD film.
Keywords :
III-V semiconductors; aluminium compounds; diamond; gallium compounds; high electron mobility transistors; microwave transistors; nanostructured materials; passivation; AlGaN-GaN; DC RF electrical performance; NCD film; NCD-coated HEMT; frequency 4 GHz; large-signal RF electrical performance; large-signal RF performance; large-signal gain; nanocrystalline diamond-coated high electron mobility transistors; output power density; power-added efficiency; pulsed RF electrical performance; reduced dispersion; reference devices; silicon nitride passivation; small-signal RF electrical performance; source access resistance; split-wafer study; transconductance; Aluminum gallium nitride; Diamonds; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Radio frequency; NCD; amplifier; load-pull; reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2345631
