Title :
Analysis of hot carrier and NBTI induced device degradation on CMOS ring oscillator
Author :
Hui Zhang ; Chunzhi Liu ; Tao Wang ; Hua Zhang ; Chenhui Zeng
Author_Institution :
Quality Eng. Center, China Aero-Polytechnology Establ., Beijing, China
Abstract :
The degradation of CMOS ring oscillator caused by hot carrier and negative bias temperature instability (NBTI) is presented in this paper. These two degradation mechanisms deteriorate the oscillator´s start-up reliability and the oscillation frequency by threshold voltage (Vth) degradation. According to impact analysis, an improved ring oscillator is proposed which is insensitive to degradation. The SPICE simulation shows that the oscillator has better start-up reliability and frequency stability.
Keywords :
CMOS integrated circuits; frequency stability; hot carriers; integrated circuit reliability; negative bias temperature instability; oscillators; CMOS ring oscillator; NBTI induced device degradation; SPICE simulation; frequency stability; hot carriers; impact analysis; negative bias temperature instability; oscillator start-up reliability; threshold voltage degradation; Degradation; Hot carriers; Inverters; Reliability; Ring oscillators; Threshold voltage; CMOS ring oscillator; NBTI; degradation; hot carrier;
Conference_Titel :
Consumer Electronics, Communications and Networks (CECNet), 2013 3rd International Conference on
Conference_Location :
Xianning
Print_ISBN :
978-1-4799-2859-0
DOI :
10.1109/CECNet.2013.6703292
