• DocumentCode
    668908
  • Title

    Applying a physics-based via model for the simulation of Through Silicon Vias

  • Author

    Dahl, David ; Xiaomin Duan ; Beyreuther, Anne ; Ndip, Ivan ; Lang, K.-D. ; Schuster, Christian

  • Author_Institution
    Inst. fur Theor. Elektrotechnik, Tech. Univ. Hamburg-Harburg (TUHH), Hamburg, Germany
  • fYear
    2013
  • fDate
    27-30 Oct. 2013
  • Firstpage
    65
  • Lastpage
    68
  • Abstract
    This paper presents a first approach for the efficient modeling of Through Silicon Vias based on a Physics-Based Via model for application in silicon interposers with metallic boundaries.
  • Keywords
    elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; three-dimensional integrated circuits; vias; Si; metallic boundary; physics-based via model; silicon interposer; through silicon vias; Conductivity; Crosstalk; Finite element analysis; Impedance; Integrated circuit modeling; Permittivity; Silicon; 3D interconnects; Physics-Based Via Model; Through Silicon Vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging and Systems (EPEPS), 2013 IEEE 22nd Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4799-0705-2
  • Type

    conf

  • DOI
    10.1109/EPEPS.2013.6703468
  • Filename
    6703468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=668908