Title :
Applying a physics-based via model for the simulation of Through Silicon Vias
Author :
Dahl, David ; Xiaomin Duan ; Beyreuther, Anne ; Ndip, Ivan ; Lang, K.-D. ; Schuster, Christian
Author_Institution :
Inst. fur Theor. Elektrotechnik, Tech. Univ. Hamburg-Harburg (TUHH), Hamburg, Germany
Abstract :
This paper presents a first approach for the efficient modeling of Through Silicon Vias based on a Physics-Based Via model for application in silicon interposers with metallic boundaries.
Keywords :
elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; three-dimensional integrated circuits; vias; Si; metallic boundary; physics-based via model; silicon interposer; through silicon vias; Conductivity; Crosstalk; Finite element analysis; Impedance; Integrated circuit modeling; Permittivity; Silicon; 3D interconnects; Physics-Based Via Model; Through Silicon Vias;
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2013 IEEE 22nd Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-0705-2
DOI :
10.1109/EPEPS.2013.6703468
