Title :
Simulation of the TSV-to-device coupling in 3D ICs for short-channel strained silicon transistors
Author :
Yeleswarapu, Krishnamurthy ; Trivedi, Amit Ranjan ; Mukhopadhyay, Saibal
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper analyzes Through-Silicon-Via (TSV)-to-device coupling due to the mechanical stress and the electrical field using three dimensional process and device simulation. The analysis considering 40nm and 28nm transistor demonstrates that TSV only has a minor impact on the current of short-channel devices and the effect diminishes with technology scaling.
Keywords :
MOSFET; coupled circuits; scaling circuits; three-dimensional integrated circuits; 3D IC; Si; TSV-to-device coupling; electrical field; mechanical stress; short-channel devices; short-channel strained silicon transistors; size 28 nm; size 40 nm; technology scaling; through silicon via; Couplings; MOSFET; Solid modeling; Stress; Through-silicon vias;
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2013 IEEE 22nd Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-0705-2
DOI :
10.1109/EPEPS.2013.6703507
