DocumentCode
66947
Title
P2S5/(NH4)2Sx -Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs
Author
Subramanian, Sivaraman ; Kong, Eugene Y.-J ; Daosheng Li ; Wicaksono, Satrio ; Soon Fatt Yoon ; Yee-Chia Yeo
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Volume
61
Issue
8
fYear
2014
fDate
Aug. 2014
Firstpage
2767
Lastpage
2773
Abstract
Ultrashallow junctions that are abrupt and have low resistance are needed for the source/drain extensions (SDEs) of MOSFETs at future technology nodes. In addition, the use of 3-D devices, such as FinFETs or nanowire FETs, will require a doping process that is conformal. In this paper, we discuss P2S5/(NH4)2Sx-based doping for potential use in the formation of SDEs for n-channel InGaAs FETs. MOSFETs with source and drain formed using this doping technique are demonstrated. The effect of the dopant activation step on device performance is also studied.
Keywords
III-V semiconductors; MOSFET; field effect transistors; gallium arsenide; indium compounds; nitrogen compounds; phosphorus compounds; semiconductor doping; 3D devices; FinFET; InGaAs; MOSFET; P2S5-(NH4)2Sx-based doping; P2S5-(NH4)Sx; SDE; dopant activation step; doping process; future technology nodes; n-channel InGaAs FET; nanowire FET; source-drain extensions; ultrashallow junctions; Annealing; Doping; Indium gallium arsenide; Junctions; Logic gates; MOSFET; Surface treatment; (NH₄)₂Sₓ; (NH4)2Sx; InGaAs; P₂S₅; P2S5; monolayer doping (MLD); source-drain extensions (SDEs).; source??drain extensions (SDEs);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2327637
Filename
6842589
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