DocumentCode :
669972
Title :
Improved noise parameters measurement for high frequency devices
Author :
Pasquet, Daniel ; Descamps, Philippe ; Lesenechal, Dominique
Author_Institution :
LaMIPS Lab., Caen, France
Volume :
01
fYear :
2013
fDate :
16-19 Oct. 2013
Firstpage :
161
Lastpage :
169
Abstract :
In this paper, we present the conventional noise parameters measurement methods that use a complicate and expensive set-up. They use a noise receiver, an impedance tuner, a calibrated noise source and a vector network analyzer. All this is controlled by heavy software. We show a more synthetic representation of the noise leading to a new measurement process where no impedance tuner is used. At the end, we detail how a transistor (an HBT) can be simply characterized by simple correlation matrices transformation. Then, we give some perspectives toward a method using only a modern vector network analyzer without receiver, noise source nor tuner.
Keywords :
calibration; heterojunction bipolar transistors; noise measurement; radio receivers; tuning; HBT; high frequency device; impedance tuner; matrices transformation; noise parameter measurement; noise receiver; noise source calibration; transistor; vector network analyzer; Admittance; Impedance; Noise; Noise figure; Receivers; Temperature measurement; HBT noise model; Noise parameters; microwave; noise measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunication in Modern Satellite, Cable and Broadcasting Services (TELSIKS), 2013 11th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4799-0899-8
Type :
conf
DOI :
10.1109/TELSKS.2013.6704913
Filename :
6704913
Link To Document :
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