DocumentCode :
66999
Title :
Adaptive Acquisition of Power IGBT Transients With Discrimination Circuit
Author :
Ermel, Vladimir ; Meisner, J. ; Kurrat, Michael ; Kahmann, Martin
Author_Institution :
Inst. for High Voltage Technol. & Electr. Power Syst., Tech. Univ. Braunschweig, Braunschweig, Germany
Volume :
62
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
2364
Lastpage :
2371
Abstract :
The frequency spectrum of the power insulated gate bipolar transistor (IGBT) circuit originates mostly from high gradient switching and low rate conduction components. High gradient transients are captured with direct probes. Switching losses are represented with 3-D surfaces acquired with Delaunay triangulation processing. Interpolation functions are introduced, allowing the prediction of the switching loss in the entire 3-D space. A chopper circuit is introduced for the acquisition of the IGBT low rate transients in the conductive stage of operation. A Zener discriminator enhances the measurement accuracy by two orders of magnitude. The experimental results are presented for a half-bridge converter. Measurement uncertainties are acquired with dc and impulse calibration apparatuses.
Keywords :
bridge circuits; calibration; choppers (circuits); insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; test equipment; transients; 3D surface; DC calibration apparatus; Delaunay triangulation process; IGBT circuit; Zener discriminator; adaptive acquisition; chopper circuit; conductive stage; discrimination circuit; frequency spectrum; half-bridge converter; high gradient switching; high gradient transients; impulse calibration apparatus; interpolation functions; low rate conduction component; low rate transient; measurement uncertainty; power IGBT transient; power insulated gate bipolar transistor; Current measurement; Insulated gate bipolar transistors; Semiconductor device measurement; Switches; Transient analysis; Voltage measurement; Converters; discriminator; insulated gate bipolar transistor (IGBT); measurement; voltage transients;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2013.2272395
Filename :
6573375
Link To Document :
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