DocumentCode
670601
Title
Enhancement of light absorption in thin film solar cells with metallic nano-strips
Author
Sellai, A.
Author_Institution
Dept. of Phys., Sultan Qaboos Univ., Muscat, Oman
fYear
2013
fDate
17-20 Nov. 2013
Firstpage
298
Lastpage
302
Abstract
Numerical analysis using both Finite Element and Rigorous Coupled Wave Methods are used to examine the impact of salient parameters on the absorption and enhanced field distribution in a thin film solar cell with metallic nano-strip structures. The absorption enhancement in these structures is due to light coupling into both plasmonic and guided wave modes. It is shown that the combination of these modes could overcome the drawbacks of angle, wavelength and polarization selectivity. The simulation results show also that the metallic strips are much more efficient when on the bottom rather than on the top of the active layer (Si), that the thickness of an the optimum passivation SiO2 layer thickness varies with the wavelength of the incident light, suggesting that a SiO2 layer with non-uniform thickness might be better for optimum overall absorption and efficiency. From the calculated field distribution as a function of both the strips depth and width, it appears that the field strength in the active layer is much more affected by the changes in the width rather than in the depth.
Keywords
finite element analysis; nanophotonics; passivation; plasmonics; silicon; silicon compounds; solar absorber-convertors; solar cells; Si; SiO2; active layer; finite element method; guided wave mode; light absorption enhancement; light coupling; metallic nanostrips; optimum passivation layer thickness; plasmonic wave mode; rigorous coupled wave method; salient parameter; thin film solar cell; Absorption; Gratings; Optical surface waves; Photovoltaic cells; Plasmons; Silicon; Strips; Absorption enhancement; Guided wave modes; Surface plasmons; Thin film solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
GCC Conference and Exhibition (GCC), 2013 7th IEEE
Conference_Location
Doha
Print_ISBN
978-1-4799-0722-9
Type
conf
DOI
10.1109/IEEEGCC.2013.6705793
Filename
6705793
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