Towards ultra high frequency and high efficiency gate drive circuits

Author

Ghazi, K.A. ; Ben-Brahim, L.

Author_Institution

Qatar Univ., Doha, Qatar

fYear

2013

fDate

17-20 Nov. 2013

Firstpage

378

Lastpage

383

Abstract

Recent developments in semiconductor technology enabled developing converters with ultra high switching frequency to achieve high power densities which increased the complexity of designing optimized gate drive circuits. This paper discusses latest developments in gate drive technologies including level-shifting, isolated power sources and drive circuit techniques which are further investigated by simulation and compared to be used in future gate drive circuits. Special considerations for designing gate drive circuits have been mentioned and foundation laid out for further optimization of their performance. Finally a new gate drive circuit was proposed based on mentioned developments and challenges discussed to bring proposed gate drive circuit into practical industrial applications.

Keywords

UHF integrated circuits; circuit optimisation; circuit simulation; driver circuits; integrated circuit design; semiconductor technology; high efficiency gate drive circuits; isolated power sources; level-shifting; practical industrial applications; semiconductor technology; ultrahigh frequency circuits; Capacitance; Drives; Logic gates; Pulse transformers; RLC circuits; Switches; Switching circuits; Gate Capacitance Energy Recovery; Integrated Isolated High Side Gate Drive; Isolated Power Source; Level Shifting Techniques; Resonant Gate Drive Circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

GCC Conference and Exhibition (GCC), 2013 7th IEEE

Conference_Location

Doha

Print_ISBN

978-1-4799-0722-9

Type

conf

DOI

10.1109/IEEEGCC.2013.6705808

Filename

6705808