Title :
A 113 Gb/s (10 × 11.3 Gb/s) ultra-low power EAM driver array
Author :
Vaernewyck, R. ; Bauwelinck, J. ; Yin, X. ; Pierco, R. ; Verbrugghe, J. ; Torfs, G. ; Li, Zuyi ; Qiu, X.Z. ; Vandewege, J. ; Cronin, R. ; Borghesani, A. ; Moodie, D.
Author_Institution :
INTEC/IMEC, Ghent Univ., Ghent, Belgium
Abstract :
An ultra-low power SiGe BiCMOS IC for driving a 10 channel EAM array at 113 Gb/s is presented for WDM-PON applications. The driver array consumes only 2.2 W or 220 mW per channel, 50% below the state of the art.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; electro-optical modulation; electroabsorption; optical arrays; optical communication equipment; passive optical networks; wavelength division multiplexing; BiCMOS IC; SiGe; WDM-PON; bit rate 11.3 Gbit/s; bit rate 113 Gbit/s; power 2.2 W; power 220 mW; ultralow power EAM driver array; Arrays; Modulation; Optical transmitters; Power demand; Semiconductor device measurement; Voltage control; Wavelength division multiplexing;
Conference_Titel :
Optical Communications (ECOC), 2012 38th European Conference and Exhibition on
Conference_Location :
Amsterdam
