• DocumentCode
    67088
  • Title

    Circuit Level Modeling of Extra Combinational Delays in SRAM-Based FPGAs Due to Transient Ionizing Radiation

  • Author

    Darvishi, Mostafa ; Audet, Yves ; Blaquiere, Yves ; Thibeault, Claude ; Pichette, Simon ; Tazi, Fatima Zahra

  • Author_Institution
    Electr. Eng. Dept., Ecole Polytech., Montreal, QC, Canada
  • Volume
    61
  • Issue
    6
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3535
  • Lastpage
    3542
  • Abstract
    This paper presents circuit level models that explain the extra combinational delays in a SRAM-based FPGA (Virtex-5) due to Single Event Upsets (SEUs). Several scenarios of extra combinational delays are simulated based on the circuit architecture of the FPGA core, namely Configurable Logic Blocks (CLBs) and routing. It is found that the main delay contribution originates from extra interconnection lines that are unintentionally connected to the main circuit path via pass transistors activated by SEUs. Moreover, longer delay faults observed on Input/Ouput Blocks (IOBs) due to SEU were investigated through simulations. In all cases, results are in close agreement with the ones obtained experimentally while exposing the FPGA to proton irradiation.
  • Keywords
    SRAM chips; combinational circuits; delays; field programmable gate arrays; integrated circuit interconnections; integrated circuit modelling; radiation hardening (electronics); CLBs; IOBs; SEUs; SRAM-Based FPGAs; Virtex-5; circuit architecture; circuit level modeling; circuit path; configurable logic blocks; delay faults; extra combinational delays; extra interconnection lines; input-ouput blocks; pass transistors; proton irradiation; routing; single event upsets; transient ionizing radiation; Delays; Field programmable gate arrays; Integrated circuit interconnections; Integrated circuit modeling; Ionizing radiation; SRAM cells; Single event upsets; Transistors; Configurable logic element; IBIS model; Input/Ouput Blocks (IOBs); SRAM-based FPGA; extra combinational delays; observed delay change (ODC); single event upset (SEU);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2369424
  • Filename
    6971238