15 GHz medium power amplifier design based On 0.15 μm p-HEMT GaAs technology for wideband applications

Author

Rasidah, S. ; Samsuri, N.M. ; Kushairi, Norhapizin ; Ngah, N. Azhadi

Author_Institution

TM Innovation Centre, TM R&D Sdn. Bhd., Cyberjaya, Malaysia

fYear

2013

fDate

25-27 Sept. 2013

Firstpage

113

Lastpage

116

Abstract

This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology from WIN semiconductor. The type of active device selected for this design is from the depletion mode p-HEMT. The device consumes 4.5 V of voltage supply and -0.2 V of DC bias. At operating frequency of 15 GHz, the circuit is design to have optimum power with 50 Ω impedance matching for both input and output network, high input and output return loss, high small signal gain, linear output power and high power aided efficiency (PAE).

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; high electron mobility transistors; GaAs; Ku-band medium power amplifier; WIN semiconductor; depletion mode p-HEMT; frequency 15 GHz; p-HEMT GaAs technology; size 0.15 mum; voltage -0.2 V; voltage 4.5 V; wideband applications; Decision support systems; Ku-Band power amplifier; gallium arsenide (GaAs); medium power amplifier (MPA); monolithic microwave integrated circuit (MMIC); p-HEMT; power aided efficiency (PAE); wideband power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on

Conference_Location

Langkawi

Print_ISBN

978-1-4799-1181-3

Type

conf

DOI

10.1109/RSM.2013.6706486

Filename

6706486