Title :
Effect of channel width-to-length ratio on isothermal point of MOSFET-ISFET structure
Author :
Noh, Nurul Izzati Mohammad ; Yusof, Khairul Aimi ; Zolkapli, Maizatul ; Abdullah, Ali Zaini ; Abdullah, Wan Fazlida Hanim ; Herman, Sukreen Hana
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
The effect of channel width-to-length (W/L) ratio on MOSFET-ISFET structures was investigated from simulation and experimental approach. A metal-oxide-semiconductor field-effect-transistor (MOSFET) has been adopted to investigate the isothermal point of an ion-sensitive FET (ISFET), which is needed to suit the readout interfacing circuit of an ISFET sensor. The MOSFET structure with different W/L ratio has been characterized in order to see the effect of W/L ratio to the isothermal point. The Keithley 236 Parameter Analyzer and Semi-auto prober micromanipulator system were used to measure the drain-source current (IDS) versus gate to source voltage (VGS) curves at various temperatures from 30 °C to 60 °C. The simulation result showed that the reduction of W/L ratio can decrease the isothermal point and this was proven by the actual measurement.
Keywords :
MOSFET; ion sensitive field effect transistors; readout electronics; ISFET sensor; Keithley 236 parameter analyzer; MOSFET-ISFET structure; channel width-to-length ratio; drain-source current; gate-source voltage curves; ion-sensitive FET; isothermal point; metal-oxide-semiconductor fieldeffect-transistor; readout interfacing circuit; semiauto prober micromanipulator system; temperature 30 degC to 60 degC; Current measurement; Isothermal processes; MOSFET; MOSFET circuits; Temperature; Temperature measurement; Temperature sensors; Ion-Sensitive Field Effect (ISFET); Isothermal point; ratio of width-to-length (W/L); temperatures;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
DOI :
10.1109/RSM.2013.6706490
