DocumentCode
671162
Title
Calibration of the density-gradient TCAD model for germanium FinFETs
Author
Mehta, Harsham ; Lodha, Saurabh ; Ganguly, Utsav ; Ganguly, Shaumik
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
fYear
2013
fDate
25-27 Sept. 2013
Firstpage
143
Lastpage
146
Abstract
We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.
Keywords
MOSFET; Poisson equation; Schrodinger equation; calibration; elemental semiconductors; germanium; semiconductor device models; technology CAD (electronics); Ge; calibration; density-gradient TCAD model; doping level; fin thickness; germanium FinFETs; multiband Schrodinger-Poisson simulations; quantum confinement; surface orientation; Doping; FinFETs; Germanium; Logic gates; Mathematical model; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location
Langkawi
Print_ISBN
978-1-4799-1181-3
Type
conf
DOI
10.1109/RSM.2013.6706493
Filename
6706493
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