Effect of film thickness on the memristive behavior of spin coated titanium dioxide thin films

Author

Kamarozaman, Nur Syahirah ; Md Rashid, M.A.R. ; Musa, M.Z. ; Herman, Sukreen Hana ; Bakar, Rohani Abu ; Abdullah, Wan Fazlida Hanim ; Rusop, M.

Author_Institution

NANO-Electron. Centre (NET), Univ. Teknol. Mara (UiTM), Shah Alam, Malaysia

fYear

2013

fDate

25-27 Sept. 2013

Firstpage

155

Lastpage

158

Abstract

The paper presents the memristive behavior of spin-coated titania thin films. The spin speed during the deposition was varied and their effect on the film thickness and thus, to the memristive behavior was studied. Sample deposited at 5000 rpm produced thinner film thickness which result in better switching behavior. The sample showed larger OFF to ON resistance ratio of 5. All samples were measured 3 times for each positive and negative bias. It was found that the memristive behavior was repeatable for 2^nd and 3^rd measurement. The crystallinity of the films was characterized using Raman spectroscopy. In our work, it was observed that the film thickness mainly affects the switching behavior of memristive device instead of the crystallinity of the films.

Keywords

Raman spectra; liquid phase deposition; memristors; spin coating; thin films; titanium compounds; OFF-to-ON resistance ratio; Raman spectroscopy; TiO₂; crystallinity; film thickness effect; memristive behavior; memristive device; negative bias; positive bias; spin coated titanium dioxide thin films; switching behavior; Current measurement; Films; Memristors; Resistance; Semiconductor device measurement; Switches; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on

Conference_Location

Langkawi

Print_ISBN

978-1-4799-1181-3

Type

conf

DOI

10.1109/RSM.2013.6706496

Filename

6706496