Title :
Annealing effects on titanium dioxide films by Sol-Gel spin coating method
Author :
Nadzirah, Sh ; Hashim, U.
Author_Institution :
Nanostruct. Lab.-on-chip Res. Group, Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
Abstract :
TiO2 thin films were deposited on silicon dioxide substrates using a sol-gel method. The surface morphologies, structural and electrical properties at different annealing temperatures were studied using atomic force microscopy (AFM), X-ray diffraction (XRD) and Kiethley 6485 pico-ammeter. The XRD pattern displayed the presence of anatase and rutile structures even at low temperature while AFM displayed that the annealing temperature affects the particle size. Current-voltage (I-V) characteristic revealed that the conductivity decreased as the annealing temperature varied from 300 to 900oC.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; semiconductor thin films; sol-gel processing; spin coating; surface morphology; titanium compounds; wide band gap semiconductors; AFM; Kiethley 6485 picoammeter; TiO2; X-ray diffraction; XRD pattern; anatase structure; annealing temperature effects; atomic force microscopy; current-voltage characteristic; electrical properties; particle size; rutile structure; silicon dioxide substrates; sol-gel spin coating method; structural properties; surface morphology; temperature 300 degC to 900 degC; titanium dioxide thin films; Annealing; Films; Nanoparticles; Substrates; Titanium; X-ray scattering; Annealing effect; Sol gel; Titanium dioxide;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
DOI :
10.1109/RSM.2013.6706497
